document number: 93913 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 03-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 three phase inverter module in mtp package 1200 v npt igbt and hexfred ? diodes, 15 a GB15XP120KTPBF vishay semiconductors features ? generation 5 npt 1200 v igbt technology ?hexfred ? diode with ultrasoft reverse recovery ? very low conduction and switching losses ? optional smt thermistor (ntc) ? aluminum oxide dbc ? very low stray inductance desi gn for high speed operation ? short circuit 10 s ? square rbsoa ? operating frequencies 8 khz to 60 khz ? ul approved file e78996 ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level benefits ? optimized for inverter motor drive applications ? low emi, requires less snubbing ? direct mounting to heatsink ? pcb solderable terminals ? very low junction to case thermal resistance product summary v ces 1200 v v ce(on) typical at v ge = 15 v 2.51 v i c at t c = 100 c 15 a t sc at t j = 150 c > 10 s mtp absolute maximum ratings parameter symbol test co nditions max. units collector to em itter voltage v ces 1200 v continuous coll ector current i c t c = 25 c 30 a t c = 100 c 15 pulsed collector current i cm 60 peak switching current i lm 60 diode continuous forward current i f t c = 100 c 15 peak diode forward current i fm 30 gate to emitter voltage v ge 20 v rms isolation voltage v isol any terminal to case, t = 1 min 2500 maximum power dissipation (including diode and igbt) p d t c = 25 c 187 w t c = 100 c 75
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93913 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 03-aug-10 GB15XP120KTPBF vishay semiconductors three phase inverter module in mtp package 1200 v npt igbt and hexfred ? diodes, 15 a electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units collector to emitte r breakdown voltage v (br)ces v ge = 0 v, i c = 250 a 1200 - - v temperature coefficient of v (br)ces ? v (br)ces / ? t j v ge = 0 v, i c = 1 ma - 1.11 - v/c collector to em itter voltage v ce(on) v ge = 15 v, i c = 15 a - 2.51 2.70 v v ge = 15 v, i c = 30 a - 3.36 3.66 v ge = 15 v, i c = 15 a, t j = 125 c - 2.94 3.16 v ge = 15 v, i c = 30 a, t j = 125 c - 4.12 4.46 gate threshold voltage v ge(th) i c = 250 a 4 - 6 temperature coefficient of threshold voltage ? v ge(th) / ? t j v ce = v ge , i c = 1 ma - - 10 - mv/c forward transconductance g fe v ce = 25 v, i c = 15 a - 12 - s collector to emitte r leaking current i ces v ge = 0 v, v ce = 1200 v - - 250 a v ge = 0 v, v ce = 1200 v, t j = 125 c - - 1000 diode forward voltage drop v fm i f = 15 a, v ge = 0 v - 2.13 2.58 v i f = 30 a, v ge = 0 v - 2.70 3.33 i f = 15 a, v ge = 0 v, t j = 125 c - 2.27 2.75 i f = 30 a, v ge = 0 v, t j = 125 c - 3.06 3.76 gate to emitter leakage current i ges v ge = 20 v - - 250 na switching characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditi ons min. typ. max. units total gate charge (turn-on) q g i c = 15 a v cc = 600 v v ge = 15 v - 98 146 nc gate to emitter charge (turn-on) q ge -1217 gate to collector charge (turn-on) q gc -4669 turn-on switching loss e on i c = 15 a, v cc = 600 v, v ge = 15 v r g = 10 ? , l = 500 h, t j = 25 c energy losses include tail and diode reverse recovery - 0.990 1.485 mj turn-off switching loss e off - 0.827 1.241 total switching loss e ts - 1.817 2.726 turn-on switching loss e on i c = 15 a, v cc = 600 v, v ge = 15 v r g = 10 ? , l = 500 h, t j = 125 c energy losses include tail and diode reverse recovery - 1.352 2.028 mj turn-off switching loss e off - 1.138 1.707 total switching loss e ts - 2.490 3.735 turn-on delay time t d(on) i c = 15 a, v cc = 600 v, v ge = 15 v l = 500 h, l s = 100 nh r g = 10 ? , t j = 125 c - 95 143 ns rise time t r -1827 turn-off delay time t d(off) - 134 200 fall time t f - 227 341 reverse bias safe operating area rbsoa t j = 150 c, i c = 60 a r g = 10 ? , v ge = 15 v to 0 fullsquare short circuit safe operating area scsoa v cc = 600 v, v ge = + 15 v to 0 t j = 150 c, v p = 1200 v, r g = 10 ? 10 - - s input capacitance c ies v ge = 0 v v cc = 30 v f = 1 mhz - 1302 1953 pf output capacitance c oes - 717 1076 reverse transfer capacitance c res -3857 diode reverse recovery energy e rec i c = 15 a, v cc = 600 v, v ge = 15 v l = 500 h, l s = 100 nh r g = 10 ? , t j = 125 c - 819 - j diode reverse recovery time t rr -96-ns diode peak reverse current i rr -35- a
document number: 93913 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 03-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 GB15XP120KTPBF three phase inverter module in mtp package 1200 v npt igbt and hexfred ? diodes, 15 a vishay semiconductors notes (1) t 0 , t 1 are thermistors temperatures (2) fig. 1 - typical output characteristics t j = 25 c fig. 2 - typical output characteristics t j = 125 c thermistor specifications (t code only) parameter symbol test cond itions min. typ. max. units resistance r 0 (1) t 0 = 25 c - 30 - k ? sensitivity index of the thermistor material ? (1)(2) t 0 = 25 c t 1 = 85 c -4000- k r 0 r 1 ------ - ? 1 t 0 ------ 1 t 1 ------ ? ?? ?? exp = thermal and mechanical specifications parameter symbol test conditions min. typ. max. units operating junction temperature range t j - 40 - 150 c storage temperature range t stg - 40 - 125 junction to case igbt r thjc --1.1 c/w diode --1.7 module -0.50- case to sink per module r thcs heatsink compound thermal conductivity = 1 w/mk - 0.1 - mounting torque --4nm weight -65- g 0246 0 20 40 60 vge=18v vge=15v vge=12v vge=10v vge=8v vce (v) ice (a) 0246 0 20 40 60 vge=18v vge=15v vge=12v vge=10v vge=8v vce (v) ice (a)
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93913 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 03-aug-10 GB15XP120KTPBF vishay semiconductors three phase inverter module in mtp package 1200 v npt igbt and hexfred ? diodes, 15 a fig. 3 - typical v ce vs. v ge t j = 25 c fig. 4 - typical v ce vs. v ge t j = 125 c fig. 5 - typical energy loss vs. i c t j = 125 c, l = 500 h, v ce = 600 v r g = 10 ? ; v ge = 15 v fig. 6 - typical switching time vs. i c t j = 125 c, l = 500 h, v ce = 600 v r g = 10 ? ; v ge = 15 v fig. 7 - typical energy loss vs. r g t j = 125 c, l = 500 h, v ce = 600 v i c = 15 a; v ge = 15 v fig. 8 - typical switching time vs. r g t j = 125 c, l = 500 h, v ce = 600 v i c = 15 a; v ge = 15 v 5101520 0 5 10 15 20 i ce=7.5a i ce=15a i ce=30a vge (v) vce (v) 5101520 0 5 10 15 20 i ce=7.5a i ce=15a i ce=30a vge (v) vce (v) ic (a) energy (mj) 5152535 500 1500 2500 3500 4500 e tot e on e off 5 1015202530 1 10 100 1000 ic (a) swiching time (ns) t f td off td on t r rg ( ) energy (mj) 0 1020304050 0 1 2 3 4 e tot e o ff e o n 0 1020304050 10 100 1000 rg ( ) swiching time (ns) t f td off td on t r
document number: 93913 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 03-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 GB15XP120KTPBF three phase inverter module in mtp package 1200 v npt igbt and hexfred ? diodes, 15 a vishay semiconductors fig. 9 - typical capacitance vs. v ce v ge = 0 v; f = 1 mhz fig. 10 - typical gate charge vs. v ge i ce = 15 a fig. 11 - maximum dc collector current vs. case temperature fig. 12 - power dissipation vs. case temperature (igbt only) fig. 13 - forward soa t c = 25 c, t j ? 150 c fig. 14 - reverse bias soa t j = 150 c, v ge = 15 v 0 10203040 10 100 1000 10000 vce (v) capacitance (pf) cies coes cres q g , total gate charge (nc) 0 20 40 60 80 100 0 4 8 12 16 600v v ge (v) 0 40 80 120 160 0 8 16 24 32 ic (a) tc (c) 04080120160 0 30 60 90 120 tc (c) ptot (w) 1 10 100 1000 10000 0.01 0.1 1 10 100 vce (v) ic (a) 20 s 100 s 1 ms dc 10 ms 10 100 1000 10000 1 10 100 vce (v) ic (a)
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93913 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 03-aug-10 GB15XP120KTPBF vishay semiconductors three phase inverter module in mtp package 1200 v npt igbt and hexfred ? diodes, 15 a fig. 15 - typical transfer characteristics v ce = 50 v; t p = 10 s fig. 16 - typical diode forward characteristics t p = 80 s fig. 17 - typical diode i rr vs. i f t j = 125 c fig. 18 - typical diode i rr vs. r g t j = 125 c; i f = 10 a fig. 19 - typical diode i rr vs. di f /dt; v cc = 600 v; v ge = 15 v; i ce = 10 a, t j = 125 c 0 4 8 12 16 0 40 80 120 160 vge (v) ice (a) tj = 25c tj = 125c 01234 0 10 20 30 40 50 vf (v) if (a) tj = 25c tj = 125c 5101520253035 5 15 25 35 45 55 if (a) irr (a) rg=4.7 rg= 10 rg= 22 rg=47 0 1020304050 15 20 25 30 35 40 45 rg ( ) irr (a) 400 550 700 850 1000 1150 1300 15 20 25 30 35 40 45 dif/dt (a/s) irr (a)
document number: 93913 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 03-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 7 GB15XP120KTPBF three phase inverter module in mtp package 1200 v npt igbt and hexfred ? diodes, 15 a vishay semiconductors fig. 20 - maximum transient thermal impedance, junction to case (igbt) fig. 21 - maximum transient thermal impedance, junction to case (diode) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 0.001 0.01 0.1 1 10 single pulse (thermal response) 0.5 0.3 0.1 0.05 0.02 0.01 ri (c/w) 0.196 0.515 0.389 i (sec) 0.000547 0.025615 0.037176 notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc t1 , rectangular pulse duration (sec) thermal response (zth jc ) j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 0.001 0.01 0.1 1 10 single pulse (thermal response) 0.5 0.3 0.1 0.05 0.02 0.01 ri (c/w) 0.390 1.023 0.287 i (sec) 0.001245 0.03327 0.052639 notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc t1 , rectangular pulse duration (sec) thermal response (zth jc ) j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93913 8 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 03-aug-10 GB15XP120KTPBF vishay semiconductors three phase inverter module in mtp package 1200 v npt igbt and hexfred ? diodes, 15 a ordering information table circuit configuration 1 - igbt module 2 - nominal current rating (15 = 15 a) 3 - circuit configuration (xp = three phase inverter) 4 - voltage code (120 = 1200 v) 5 - speed/type (k = ultrafast igbt/inverter motor drive application) 7 - pbf = lead (pb)-free device code 5 13 24 67 gb 15 xp 120 k t pbf 6 - special option: none = no special option t = thermistor 13 7 1 2 8 9 5 6 10 3 4 11 12 links to related documents dimensions www.vishay.com/doc?95175
document number: 95175 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 18-mar-08 1 mtp outline dimensions vishay semiconductors dimensions in millimeters note ? unused terminals are not assembled in the package ? 1.1 ? 5 3.5 33 31.8 12 0.5 4 20.5 2.5 87 6 543 2 1 13 9 10 11 12 1.8 8.1 45 5.4 0.1 5.7 0.1 1.2 0.1 7.2 0.1 7.8 0.1 3 0.1 27.5 11.35 0.1 11.35 0.1 r2.6 (x 3) r5.8 (x 2) 8.7 0.1 6 0.1 3 0.1 8.5 0.1 39.5 0.1 44.5 48.7 63.5 0.25 1.3
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